au.\*:("SCHULMAN, J. N")
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Resonant injection quantum well lasersSCHULMAN, J. N.Applied physics letters. 1986, Vol 49, Num 12, pp 690-692, issn 0003-6951Article
Ga1-xAlxAs-Ga1-yAlyAs-GaAs double-barrier structuresSCHULMAN, J. N.Journal of applied physics. 1986, Vol 60, Num 11, pp 3954-3958, issn 0021-8979Article
Analysis of second level resonant tunneling diodes and transistorsSCHULMAN, J. N; WALDNER, M.Journal of applied physics. 1988, Vol 63, Num 8, pp 2859-2861, issn 0021-8979, 1Article
Tight-binding analysis of the conduction-band structure in quantum wiresYAMAUCHI, T; ARAKAWA, Y; SCHULMAN, J. N et al.Applied physics letters. 1990, Vol 57, Num 12, pp 1224-1226, issn 0003-6951, 3 p.Article
1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodesÖZBAY, E; BLOOM, D. M; CHOW, D. H et al.IEEE electron device letters. 1993, Vol 14, Num 8, pp 400-402, issn 0741-3106Article
Dynamics of localized excitons and high-excitation effects in II-VI quantum wells and heterostructuresKALT, H; COLLET, J. H; LE SI DANG et al.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 90-101, issn 0921-4526Article
Investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes for high speed switchingCHOW, D. H; SCHULMAN, J. N; ÖZBAY, E et al.Applied physics letters. 1992, Vol 61, Num 14, pp 1685-1687, issn 0003-6951Article
Γ- and X-state influences on resonant tunneling current in single- and double-barrier GaAs/AlAs structuresROUSSEAU, K. V; WANG, K. L; SCHULMAN, J. N et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1341-1343, issn 0003-6951Article
Above barrier doublets in GaAs/AlxGa1-xAs superlatticesSONG, J. J; YOON, Y. S; JUNG, P. S et al.Applied physics letters. 1987, Vol 50, Num 18, pp 1269-1271, issn 0003-6951Article
Observation of symmetry forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum wellSHEN, H; PARAYANTHAL, P; POLLAK, F. H et al.Solid state communications. 1986, Vol 59, Num 8, pp 557-560, issn 0038-1098Article
Band offsets: the charge transfer effectNAKAYAMA, T.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 16-22, issn 0921-4526Article
Extended-range tight-binding method for tunnelingSCHULMAN, J. N; TING, D. Z.-Y.Physical review. B, Condensed matter. 1992, Vol 45, Num 11, pp 6282-6285, issn 0163-1829Article
HgTe-CdTe double barrier tunneling structuresSCHULMAN, J. N; ANDERSON, C. L.Applied physics letters. 1986, Vol 48, Num 24, pp 1684-1686, issn 0003-6951Article
HgTe-CdTe superlattice subband dispersionSCHULMAN, J. N; CHANG, Y.-C.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2594-2601, issn 0163-1829Article
HgTe-CdTe superlattice band-gap enhancement due to interdiffusionSCHULMAN, J. N; YIA-CHUNG CHANG.Applied physics letters. 1985, Vol 46, Num 6, pp 571-573, issn 0003-6951Article
Nonlinear optical properties and blue-light-emitting diode of ZnSe/ZnS and ZnTe/ZnS strained-layer superlatticesYOKOGAWA, T.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 102-118, issn 0921-4526Article
Subband structures and wave functions of electrons in quantum wires and in-plane superlattices consisting of grid-inserted quantum-well structuresSUGAWARA, H; SCHULMAN, J. N; SAKAKI, H et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2722-2724, issn 0021-8979, 3 p.Article
Electro-optic effect in semiconductor superlatticesYIA-CHUNG CHANG; SCHULMAN, J. N; EFRON, U et al.Journal of applied physics. 1987, Vol 62, Num 11, pp 4533-4537, issn 0021-8979Article
Interband optical transitions in GaAs-Ga1-xAlxAs and InAs-GaSb superlatticesYIA-CHUNG CHANG; SCHULMAN, J. N.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2069-2079, issn 0163-1829Article
Tight-binding analysis of energy-band structures of quantum wiresARAKAWA, Y; YAMAUCHI, T; SCHULMAN, J. N et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 6, pp 4732-4738, issn 0163-1829, 7 p.Article
Dependence of lasing characteristics of quantum well lasers on substrate orientation : tight-binding theoryTAKAHASHI, T; SCHULMAN, J. N; ARAKAWA, Y et al.Applied physics letters. 1991, Vol 58, Num 9, pp 881-883, issn 0003-6951Article
Magneto-optical properties of Mn-based II-VI semimagnetic superlatticesNICHOLAS, R. J.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 156-170, issn 0921-4526Article
Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent PowerSU, N; RAJAVEL, R; DEELMAN, P et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 536-539, issn 0741-3106, 4 p.Article
Temperature dependence of high frequency and noise performance of sb-heterostructure millimeter-wave detectorsSU, N; ZHANG, Z; SCHULMAN, J. N et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 336-339, issn 0741-3106, 4 p.Article
